TC253 Status: OBSOLETE

Product Information

Features

• Very Low Noise, High Sensitivity, Electronically Variable
• High Resolution, 1/3-in Format, Solid State Charge-Coupled Device (CCD) Frame Transfer Image Sensor for Black and White National Television and Standard Committee (NTSC) and Computer Applications
• 340,000 Pixels per Field
• Frame Memory
• 656 (H) × 496 (V) Active Pixels in Image Sensing Area Compatible With Electronic Centering
• Multimode Readout Capability
  • Progressive Scan
  • Interlace Scan
  • Line Summing
• Fast Single-Pulse Clear Capability
• Continuous Electronic Exposure Control from 1/60 s to 1/5,000 s
• 7.4 um Square Pixels
• Advanced Lateral Overflow Drain
• Low Dark Current
• . High Photoresponse Uniformity from Deep Ultraviolet (DUV) to Near Infrared (NIR)
• . Solid State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics

IMPACTRON is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.

Description

The TC253SPD device is a frame-transfer, CCD image sensor designed for use in black and white NTSC TV, computer, and special-purpose applications that require high sensitivity, low noise, and small size.

The TC253SPD sensor is a new device of the IMPACTRON™ family of very low noise, high sensitivity image sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier multiplication (CCM) is achieved by using a low-noise, single-carrier, impact ionization process that occurs during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed gates activates the CCM. The amount of multiplication is adjustable, depending on the amplitude of the multiplication pulses. The device function resembles the function of image intensifiers implemented in solid state.

The image-sensing area of the TC253SPD sensor is configured into 500 lines with 680 pixels in each line. Twenty-two pixels are reserved in each line for dark reference. The blooming protection is based on an advanced lateral overflow drain concept that does not reduce NIR response. The sensor can be operated in the interlaced or progressive scan modes and can capture full 340,000 pixels in one image field. The frame transfer from the image-sensing area to the memory area is accomplished at a very high rate that minimizes image smear. The electronic exposure control is achieved by clearing unwanted charge from the image area using a short positive pulse applied to the antiblooming drain. This pulse marks the beginning of the integration time, which can be arbitrarily shortened from its nominal length. After charge is integrated and stored in the memory it is available for readout in the next cycle. This is accomplished using a unique serial register design that includes special charge multiplication pixels.

The TC253SPD sensor is built using TI-proprietary advanced split-gate virtual-phase CCD (SGVPCCD) technology, which provides devices with wide spectral response, ranging from DUV to NIR, high quantum efficiency (QE), low dark current, and high response uniformity. The TC253SPD sensor is characterized over an operating free-air temperature range of T_A = –10°C to 45°C.