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Gallium nitride (GaN) power stages
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LMG2100R044

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100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

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Data sheet

LMG2100R044

ACTIVE
Data sheet Order now

Product details

VDS (max) (mV) 100000 RDS(on) (mΩ) 4.4
VDS (max) (mV) 100000 RDS(on) (mΩ) 4.4
WQFN-FCRLF (RAR) 16 See data sheet
  • Integrated 4.4mΩ half-bridge GaN FETs and driver
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • High slew rate switching with low ringing
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • Gate driver capable of up to 10MHz switching
  • Excellent propagation delay (33ns typical) and matching (2ns typical)
  • Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
  • Supply rail undervoltage for lockout protection
  • Low power consumption
  • Exposed top QFN package for top-side cooling
  • Large GND pad for bottom-side cooling
  • Integrated 4.4mΩ half-bridge GaN FETs and driver
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • High slew rate switching with low ringing
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • Gate driver capable of up to 10MHz switching
  • Excellent propagation delay (33ns typical) and matching (2ns typical)
  • Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
  • Supply rail undervoltage for lockout protection
  • Low power consumption
  • Exposed top QFN package for top-side cooling
  • Large GND pad for bottom-side cooling

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

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Technical documentation

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* Data sheet LMG2100R044 100V, 35A GaN Half-Bridge Power Stage datasheet (Rev. B) PDF | HTML 15 Mar 2024
Technical article GaN 可推動電子設計轉型的 4 種中電壓應用 PDF | HTML 20 Feb 2024
Technical article GaN이 전자 설계를 혁신하는 4가지 중전압 애플리케이션 PDF | HTML 20 Feb 2024
Technical article Four mid-voltage applications where GaN will transform electronic designs PDF | HTML 17 Feb 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG2100EVM-078 — LMG2100 evaluation module

The LMG2100 evaluation module (EVM) is a compact easy-to-use power stage that can be configured as a buck converter, boost converter or other converter topology using a half bridge. The EVM features a LMG2100 half-bridge power module with two 100V 4.4-mΩ GaN FETs.
User guide: PDF | HTML
Not available on TI.com
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
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Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG5200 — 80V GaN Half Bridge Power Stage
Gallium nitride (GaN) power stages
LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 — 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting LMG5200 — 80V GaN Half Bridge Power Stage
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Reference designs

TIDA-010042 — 400-W GaN-based MPPT charge controller and power optimizer reference design

This reference design is a Maximum Power Point Tracking (MPPT) solar charge controller for 12V and 24V batteries that can be used as a power optimizer in the future. This compact reference design targets small- and medium-power solar charger designs and is capable of operating with 15V to 60V (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDA-010936 — 48V/16A small form factor three-phase GaN inverter reference design for integrated motor drives

This reference design demonstrates a high-power density 12V to 60V 3-phase power stage using three LMG2100R044 100V, 35A GaN half-bridges with integrated GaN FETs, driver and bootstrap diode specifically for motor-integrated servo drives and robotics applications.  
Accurate phase-current sensing (...)
Design guide: PDF
Reference designs

PMP23340UCD — 48V to 12V GaN-enabled 1.1-kW 1/8th brick reference design using digital power isolated controller

This reference design shows how a high performance GaN can enable high efficiency and small form factor for intermediate bus converters using UCD3138ARJAT digital power isolated controller.
Test report: PDF
Reference designs

PMP23340C2K — 48V to 12V GaN-enabled 1.1 kW 1/8th brick power module reference design using C2000™ MCU

This reference design shows how a high performance GaN can enable high efficiency and small form factor for intermediate bus converters.
Test report: PDF
Reference designs

TIDA-010933 — 1.6kW, bidirectional micro inverter based on GaN reference design

This reference design shows a four-input bidirectional 1.6kW GaN-based microinverter with energy storage capability.
Design guide: PDF
Reference designs

PMP41068 — 100W Class-D audio amplifies reference design with GaN

This reference design demonstrates a Single-end Class D power stage using GaN HEMT. The design uses LMG2100R044 as power switches, the working frequency is 1MHz. 
Test report: PDF
Package Pins Download
WQFN-FCRLF (RAR) 16 View options
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