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UCC27311A-Q1

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Automotive, 120-V 4-A half-bridge gate driver with 8-V UVLO and enable

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Data sheet

UCC27311A-Q1

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Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Negative voltage handling Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Negative voltage handling Driver configuration Dual, Noninverting, TTL compatible
VSON (DRC) 10 9 mm² 3 x 3
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Temperature grade 1 (T J = –40°C to 150°C)
    • HBM ESD classification level 1B
    • CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage 120-V DC
  • 3.7-A sink, 4.5-A source output currents
  • Integrated bootstrap diode
  • Input pins can tolerate –10 V to +20 V and are independent of supply voltage range
  • TTL compatible inputs
  • 8-V to 17-V VDD operating range (20-V abs max) with UVLO
  • 7.2-ns rise and 5.5-ns fall time with 1000-pF load
  • Enable/disable functionality with low current (7 µA) consumption when disabled
  • Fast propagation delay times (20 ns typical)
  • 4-ns delay matching
  • Junction temperature specified from –40°C to +150°C
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Temperature grade 1 (T J = –40°C to 150°C)
    • HBM ESD classification level 1B
    • CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage 120-V DC
  • 3.7-A sink, 4.5-A source output currents
  • Integrated bootstrap diode
  • Input pins can tolerate –10 V to +20 V and are independent of supply voltage range
  • TTL compatible inputs
  • 8-V to 17-V VDD operating range (20-V abs max) with UVLO
  • 7.2-ns rise and 5.5-ns fall time with 1000-pF load
  • Enable/disable functionality with low current (7 µA) consumption when disabled
  • Fast propagation delay times (20 ns typical)
  • 4-ns delay matching
  • Junction temperature specified from –40°C to +150°C

The UCC273 11A -Q1 automotive half-bridge driver is a robust N-channel MOSFET driver with an absolute maximum switch node (HS) voltage rating of 115 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3.7-A peak source and 4.5-A peak sink current capability allows the UCC273 11A -Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node of the UCC273 11A -Q1 (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The LI and HI inputs are also independent of supply voltage and have a 20-V absolute maximum rating.

The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turn on and turn off of each other. An on-chip 120-V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC273 11A -Q1 automotive half-bridge driver is a robust N-channel MOSFET driver with an absolute maximum switch node (HS) voltage rating of 115 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3.7-A peak source and 4.5-A peak sink current capability allows the UCC273 11A -Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node of the UCC273 11A -Q1 (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The input structure can directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The LI and HI inputs are also independent of supply voltage and have a 20-V absolute maximum rating.

The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turn on and turn off of each other. An on-chip 120-V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.
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* Data sheet UCC27311A-Q1 Automotive 120-V, 3.7-A/4.5-A Half-Bridge Driver with 8-V UVLO, Integrated Bootstrap Diode, and Enable datasheet (Rev. A) PDF | HTML 25 Aug 2023
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 04 Apr 2024

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UCC27282EVM-335 — UCC27282 120-V, 3-A, 5-V UVLO high-side low-side gate driver evaluation module

UCC27282EVM-335 is designed for evaluating UCC27282DRC, which is a 120V half bridge gate driver with high source and sink peak current capability. This EVM could be served to evaluate the driver IC against its datasheet. The EVM can also be used as Driver IC component selection guide. The EVM can (...)
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